IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Extended-Gate Field-Effect Transistor With Low-Temperature Hydrothermally Synthesized $\hbox{SnO}_{2}$ Nanorods as pH Sensor

Author(s): Hung-Hsien Li ; Wei-Syuan Dai ; Jung-Chuan Chou ; Huang-Chung Cheng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 33
Page Count: 3
Page(s): 1,495 - 1,497
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2210274
Regular:

An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO2 nanorods as the pH sensor was demonstrated for the first time. The SnO2... View More

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