IEEE - Institute of Electrical and Electronics Engineers, Inc. - Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

Author(s): F. Bauer ; I. Nistor ; A. Mihaila ; M. Antoniou ; F. Udrea
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 33
Page Count: 3
Page(s): 1,288 - 1,290
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2203092
Regular:

In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse... View More

Advertisement