IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions

Author(s): Rongsheng Chen ; Wei Zhou ; Meng Zhang ; Man Wong ; Hoi-Sing Kwok
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2012
Volume: 33
Page Count: 3
Page(s): 1,150 - 1,152
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2201444
Regular:

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT... View More

Advertisement