IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel

Author(s): Horng-Chih Lin ; Cheng-I Lin ; Tiao-Yuan Huang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2012
Volume: 33
Page Count: 3
Page(s): 53 - 55
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2011.2171914
Regular:

In this letter, we study the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ultrathin and heavily phosphorous doped channel. The fabricated devices show... View More

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