IEEE - Institute of Electrical and Electronics Engineers, Inc. - Diffused-silicon power transistor characteristics as related to base and emitter geometries

Author(s): N.J. Chaplin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1960
Volume: 7
Page(s): 114 - 115
ISSN (Paper): 0096-2430
DOI: 10.1109/T-ED.1960.14649
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