IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail

Author(s): Alberto Tosi ; Fabio Acerbi ; Michele Anti ; Franco Zappa
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 48
Page Count: 6
Page(s): 1,227 - 1,232
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.2012.2208097
Regular:

In this paper, we present the design, fabrication, and experimental characterization of a new Single-Photon Avalanche Diode (SPAD) made in InGaAs/InP for photon-counting operations up to 1700 nm.... View More

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