IEEE - Institute of Electrical and Electronics Engineers, Inc. - Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

Author(s): A. Malag ; E. Dabrowska ; M. Teodorczyk ; G. Sobczak ; A. K. Kozlowska ; J. Kalbarczyk
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 48
Page Count: 7
Page(s): 465 - 471
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.2012.2184741
Regular:

An asymmetric heterostructure design has been proposed to meet high-power laser diode (LD) requirements, such as a high catastrophic optical damage threshold, a low internal loss, low thermal and... View More

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