IEEE - Institute of Electrical and Electronics Engineers, Inc. - SEU Tolerant Memory Using Error Correction Code

Author(s): Xiaoxuan She ; N. Li ; D. W. Jensen
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2012
Volume: 59
Page Count: 6
Page(s): 205 - 210
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2011.2176513
Regular:

With decreasing circuit lithography dimensions and increasing memory densities, an SEU may affect multiple adjacent memory cells. This paper presents an SEU hardened memory using error correction... View More

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