IEEE - Institute of Electrical and Electronics Engineers, Inc. - Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices

Author(s): Y. Saito ; M. Ishikawa ; T. Inokuchi ; H. Sugiyama ; T. Tanamoto ; K. Hamaya ; N. Tezuka
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 48
Page Count: 7
Page(s): 2,739 - 2,745
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2012.2202277
Regular:

New innovative ferromagnetic source/drain technologies on Si for next-generation-transistor applications are researched and developed using CoFe/AlOxn+-Si and... View More

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