IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices

Author(s): N. Ciocchini ; M. Cassinerio ; D. Fugazza ; D. Ielmini
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 59
Page Count: 7
Page(s): 3,084 - 3,090
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2012.2214784
Regular:

The amorphous phase of the chalcogenide material in phase-change memory (PCM) devices is sensitive to temperature-activated crystallization and structural relaxation (SR). The latter leads... View More

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