IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the Contribution of Bulk Defects on Charge Pumping Current

Author(s): J. T. Ryan ; R. G. Southwick ; J. P. Campbell ; K. P. Cheung ; J. S. Suehle
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 59
Page Count: 7
Page(s): 2,943 - 2,949
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2012.2211880
Regular:

Frequency-dependent charge pumping (CP) (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks.... View More

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