IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ameliorated Thermal Performance of n-p-n and p-n-p GaAs/InGaAs/InGaP Collector-Up HBTs

Author(s): Hsien-Cheng Tseng ; Sang-Jang Hwang ; Cheng-Yi Chu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 59
Page Count: 3
Page(s): 2,850 - 2,852
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2012.2209428
Regular:

To alleviate mutual heating, both n-p-n and p-n-p GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors with an effective heat-dissipation configuration (HDC), which can be used in... View More

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