IEEE - Institute of Electrical and Electronics Engineers, Inc. - Adaptive Gate Bias for Power Amplifier Temperature Compensation

Author(s): Shuyu Chen ; Jiann-Shiun Yuan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2011
Volume: 11
Page Count: 8
Page(s): 442 - 449
ISSN (Paper): 1530-4388
ISSN (Online): 1558-2574
DOI: 10.1109/TDMR.2011.2160264
Regular:

Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates... View More

Advertisement