IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

Author(s): Joohwa Kim ; J F Buckwalter
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Volume: 21
Page Count: 3
Page(s): 329 - 331
ISSN (Paper): 1531-1309
ISSN (Online): 1558-1764
DOI: 10.1109/LMWC.2011.2139197
Regular:

A low-power cascode distributed amplifier is demonstrated in a 45 nm silicon-on-insulator (SOI) CMOS process. The amplifier achieves a 3 dB bandwidth of 92 GHz. The peak gain is 9 dB with a... View More

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