IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Electrical Characteristics on the Non-Rectangular Gate Structure Variations for the Multifinger MOSFETs

Author(s): Chulhyun Park ; Youngkyu Song ; Jung Han Kang ; Seong-Ook Jung ; Ilgu Yun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2011
Volume: 1
Page Count: 7
Page(s): 352 - 358
ISSN (Paper): 2156-3950
ISSN (Online): 2156-3985
DOI: 10.1109/TCPMT.2010.2099532
Regular:

In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel... View More

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