IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

Author(s): A. Ali ; H. Madan ; A. Agrawal ; I. Ramirez ; R. Misra ; J. B. Boos ; B. R. Bennett ; J. Lindemuth ; S. Datta
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2011
Volume: 32
Page Count: 3
Page(s): 1,689 - 1,691
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2011.2170550
Regular:

This letter demonstrates, for the first time, enhancement-mode (e-mode) antimonide MOSFETs by integrating a composite high-κ gate stack (3 nm Al2O3 -1 nm GaSb) with an... View More

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