IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modified Percolation Model for Polycrystalline High- $ \kappa$ Gate Stack With Grain Boundary Defects

Author(s): N Raghavan ; K L Pey ; K Shubhakar ; M Bosman
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2011
Volume: 32
Page Count: 3
Page(s): 78 - 80
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2085074
Regular:

We modify the existing oxide breakdown (BD) percolation model in this letter to account for the presence of microstructural weakest link grain boundary (GB) defects in polycrystalline high-κ... View More

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