IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of Dynamic SRAM Stability in 45 nm CMOS

Author(s): Seng Oon Toh ; Zheng Guo ; Tsu-Jae King Liu ; B. Nikolic
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2011
Volume: 46
Page Count: 11
Page(s): 2,702 - 2,712
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.2011.2164300
Regular:

Optimization of SRAM yield using dynamic stability metrics has been evaluated in the past to ensure continued scaling of bitcell size and supply voltage in future technology nodes. Various dynamic... View More

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