IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology

Author(s): G De Sandre ; L Bettini ; A Pirola ; L Marmonier ; M Pasotti ; M Borghi ; P Mattavelli ; P Zuliani ; L Scotti ; G Mastracchio ; F Bedeschi ; R Gastaldi ; R Bez
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2011
Volume: 46
Page Count: 12
Page(s): 52 - 63
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.2010.2084491
Regular:

A 4 Mb embedded phase change memory macro has been developed in a 90 nm 6-ML CMOS technology. The storage element has been integrated using 3 additional masks with respect to process baseline. The... View More

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