IEEE - Institute of Electrical and Electronics Engineers, Inc. - Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes

Author(s): Zhiyang Chen ; A. E. Grekov ; Ruiyun Fu ; J. L. Hudgins ; H. A. Mantooth ; D. C. Sheridan ; J. Casady ; E. Santi
Sponsor(s): IEEE Industry Applications Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2011
Volume: 47
Page Count: 9
Page(s): 1,853 - 1,861
ISSN (Paper): 0093-9994
ISSN (Online): 1939-9367
DOI: 10.1109/TIA.2011.2154296
Regular:

A novel SiC junction field-effect transistor (JFET) model that uses a unified description of linear and saturated conduction modes is proposed. Advantages of the proposed model are improved... View More

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