IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

Author(s): T. R. Oldham ; D. Chen ; M. Friendlich ; M. A. Carts ; C. M. Seidleck ; K. A. LaBel
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2011
Volume: 58
Page Count: 7
Page(s): 2,904 - 2,910
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2011.2172816
Regular:

We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically... View More

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