IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Author(s): Zhiyuan Hu ; Zhangli Liu ; Hua Shao ; Zhengxuan Zhang ; Bingxu Ning ; Ming Chen ; Dawei Bi ; Shichang Zou
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Volume: 58
Page Count: 8
Page(s): 1,347 - 1,354
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2011.2132145
Regular:

The effects of total ionizing on a 180-nm CMOS technology are comprehensively studied. Firstly, we show new results on the hump effect which has strong relationship to the STI corner oxide... View More

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