IEEE - Institute of Electrical and Electronics Engineers, Inc. - $V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer

Author(s): Cheng-Yu Hu ; D. Kikuta ; M. Sugimoto ; Jin-Ping Ao ; Y. Ohno
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2011
Volume: 58
Page Count: 7
Page(s): 4,265 - 4,271
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2011.2166402
Regular:

We fabricated AlGaN/GaN heterostructure field effect transistors (HFETs) with p-GaN substrate layers and p-type ohmic contacts (p-sub HFETs) and measured the substrate-bias (VSUB)... View More

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