IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonvolatile Amorphous-Silicon Thin-Film-Transistor Memory Structure for Drain-Voltage Independent Saturation Current

Author(s): Yifei Huang ; S. Wagner ; J. C. Sturm
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2011
Volume: 58
Page Count: 4
Page(s): 2,924 - 2,927
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2011.2159609
Regular:

Transistors with floating gate, used for nonvolatile memory, have a saturation current that increases with drain voltage. This is the result of undesirable capacitive coupling between the floating... View More

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