IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Author(s): A. Cresti ; M. G. Pala ; S. Poli ; M. Mouis ; G. Ghibaudo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2011
Volume: 58
Page Count: 8
Page(s): 2,274 - 2,281
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2011.2147318
Regular:

We study the effect of surface roughness (SR) at the Si/SiO2 interfaces on transport properties of quasi 1-D and 2-D silicon nanodevices by comparing the electrical performances of... View More

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