IEEE - Institute of Electrical and Electronics Engineers, Inc. - Driving Device Comparison for Phase-Change Memory

Author(s): Lin Li ; Kailiang Lu ; B Rajendran ; T D Happ ; Hsiang-Lan Lung ; Chung Lam ; Mansun Chan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2011
Volume: 58
Page Count: 8
Page(s): 664 - 671
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2010.2100082
Regular:

A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n... View More

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