IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

Author(s): A Torsi ; Yijie Zhao ; Haitao Liu ; T Tanzawa ; A Goda ; P Kalavade ; K Parat
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2011
Volume: 58
Page Count: 6
Page(s): 11 - 16
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2010.2087338
Regular:

We have developed a program-disturb model to characterize the channel potential of the program-inhibited string during NAND flash cell programming. This model includes cell-to-cell capacitances... View More

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