IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off

Author(s): Abhinav Kranti ; G Alastair Armstrong
Sponsor(s): IEEE Circuits and Systems Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2010
Volume: 57
Page Count: 7
Page(s): 3,048 - 3,054
ISSN (Paper): 1549-8328
ISSN (Online): 1558-0806
DOI: 10.1109/TCSI.2010.2071470
Regular:

In this paper, gain-bandwidth (GB) trade-off associated with analog device/circuit design due to conflicting requirements for enhancing gain and cutoff frequency is examined. It is demonstrated... View More

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