IEEE - Institute of Electrical and Electronics Engineers, Inc. - DC and RF Degradation Induced by High RF Power Stresses in 0.18- $\mu\hbox{m}$ nMOSFETs

Author(s): Chien-Hsuan Liu ; Ruey-Lue Wang ; Yan-Kuin Su ; Chih-Ho Tu ; Ying-Zong Juang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Volume: 10
Page Count: 7
Page(s): 317 - 323
ISSN (Paper): 1530-4388
ISSN (Online): 1558-2574
DOI: 10.1109/TDMR.2010.2048032
Regular:

Both the degradations of dc and RF characteristics of nMOS transistors due to hot-carrier effect and instantaneous high RF power stresses are presented in this paper. The drain current, threshold... View More

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