IEEE - Institute of Electrical and Electronics Engineers, Inc. - 25-Gb/s Direct Modulation of Implant Confined Holey Vertical-Cavity Surface-Emitting Lasers

Author(s): Chen Chen ; Zhaobing Tian ; K.D. Choquette ; D.V. Plant
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2010
Volume: 22
Page(s): 465 - 467
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/LPT.2010.2040990
Regular:

A 25-Gb/s direct modulation of an 850-nm implant-confined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm2 . The... View More

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