IEEE - Institute of Electrical and Electronics Engineers, Inc. - Correction to “205-GHz (Al,In)N/GaN HEMTs” [Sep 10 957-959]

Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2010
Volume: 31
Page Count: 1
Page(s): 1,494
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2091593
Regular:

In the above titled paper (ibid., vol. 31, no. 9, pp. 957-959, Sep. 10), the name of one of the authors was incorrectly typeset. The second-to-last author's name is Nicolas Grandjean and not... View More

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