IEEE - Institute of Electrical and Electronics Engineers, Inc. - Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer

Author(s): Shuichi Yagi ; Xu-Qiang Shen ; Yusuke Kawakami ; Toshihide Ide ; Mitsuaki Shimizu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Volume: 31
Page Count: 3
Page(s): 945 - 947
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2052778
Regular:

We demonstrate a quasi-AlGaN/GaN heterostructure field-effect transistor (HFET). A quasi-AlGaN barrier layer consists of ultrathin GaN/AlN superlattices (SLs), resulting in low sheet resistance in... View More

Advertisement