IEEE - Institute of Electrical and Electronics Engineers, Inc. - Exploiting CMOS Technology to Enhance the Performance of ISFET Sensors

Author(s): T Prodromakis ; Yan Liu ; T Constandinou ; P Georgiou ; C Toumazou
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Volume: 31
Page Count: 3
Page(s): 1,053 - 1,055
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2052011
Regular:

This letter presents a novel method for fabricating ion-sensitive field-effect transistor (ISFET) devices in unmodified CMOS technologies. Conventional CMOS ISFETs utilize the protective... View More

Advertisement