IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

Author(s): Qin Zhang ; Yeqing Lu ; Huili Grace Xing ; Steven J Koester ; Siyuranga O Koswatta
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2010
Volume: 31
Page Count: 3
Page(s): 531 - 533
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2045100
Regular:

A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff... View More

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