IEEE - Institute of Electrical and Electronics Engineers, Inc. - High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

Author(s): Florence Bellenger ; Brice De Jaeger ; Clement Merckling ; Michel Houssa ; Julien Penaud ; Laura Nyns ; Evi Vrancken ; Matty Caymax ; Marc Meuris ; Thomas Hoffmann ; Kristin De Meyer ; Marc Heyns
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Volume: 31
Page Count: 3
Page(s): 402 - 404
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2044011
Regular:

In Germanium-based metal-oxide-semiconductor field-effect transistors, a high-quality interfacial layer prior to high--+ deposition is required to achieve low interface state densities and... View More

Advertisement