AT&T Corp. - Electrolytic shaping of germanium and silicon

Author(s): A. Uhlir
Publisher: AT&T Corp.
Publication Date: 1 March 1956
Volume: 35
Page(s): 333 - 347
ISSN (Paper): 0005-8580
DOI: 10.1002/j.1538-7305.1956.tb02385.x
Regular:

Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization... View More

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