IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

Author(s): J.Y. Hwang ; S.Y. Lee ; N.I. Lee ; H.I. Yim ; M.Y. Kim ; W.C. Lee ; J.R. Rhee ; B.S. Chun ; T.W. Kim ; Y.K. Kim ; S.S. Lee ; D.G. Hwang ; E.J. Ri
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Volume: 45
Page Count: 3
Page(s): 2,396 - 2,398
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2009.2018586
Regular:

The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were... View More

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