IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Dependence of the Performance of Strained NMOSFETs on Channel Width

Author(s): Lingyen Yeh ; Ming Han Liao ; Chun Heng Chen ; Jun Wu ; J.Y.-m. Lee ; Chee Wee Liu ; T.L. Lee ; M.S. Liang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Volume: 56
Page Count: 5
Page(s): 2,848 - 2,852
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2009.2030542
Regular:

The dependence of the performance of strained NMOSFETs on channel width was investigated. When the channel width was varied, the stress in the channel varied accordingly. This changed the electron... View More

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