IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Symmetrical Model for Microwave Power AlGaAs/InGaAs pHEMTs for Switch Circuit Applications

Author(s): Dong-Ming Lin ; Chien-Chang Huang ; Yi-Jen Chan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2009
Volume: 56
Page Count: 6
Page(s): 2,638 - 2,643
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2009.2030444
Regular:

In this paper, a nonlinear model of microwave power AlGaAs/InGaAs pseudomorphic high-electron mobility transistors (pHEMTs) for switch circuit applications is presented. The symmetrical property... View More

Advertisement