IEEE - Institute of Electrical and Electronics Engineers, Inc. - Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective

Author(s): S. Mahapatra ; M.A. Alam
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2008
Volume: 8
Page Count: 12
Page(s): 35 - 46
ISSN (Paper): 1530-4388
ISSN (Online): 1558-2574
DOI: 10.1109/TDMR.2007.912261
Regular:

In this paper, a focused review is made of our previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference... View More

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