IEEE - Institute of Electrical and Electronics Engineers, Inc. - Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

Author(s): Sung-Nam Lee ; H.Y. Ryu ; H.S. Paek ; J.K. Son ; Y.J. Sung ; K.S. Kim ; H.K. Kim ; H. Kim ; T. Jang ; K.H. Ha ; O.H. Nam ; Y. Park
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2008
Volume: 29
Page Count: 3
Page(s): 870 - 872
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2008.2001081
Regular:

InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large... View More

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