1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components. Vali...

1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determin...

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F47.<b...

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Tes...

1.1 This test method covers the determination of the temperature below which solid hydrocarbon crystals may form in aviation turbine fuels and aviation gasoline.

Note 1-The interlaboratory program that generated the pr...