IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Effect of Junction Shape and Surface Recombination on Transistor Current Gain

Author(s): A. R. Moore ; J. I. Pankove
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1954
Volume: 42
Page(s): 907 - 913
ISSN (Paper): 0096-8390
DOI: 10.1109/JRPROC.1954.274750
Regular:

An experimental and theoretical study is presented which shows that the current gain of an alloy transistor is greatly affected by the geometry of emitter and collector junctions and by surface... View More

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