IEEE - Institute of Electrical and Electronics Engineers, Inc. - Application of junction capacitance measurements to the characterization of solar cells

Author(s): F. Recart ; A. Cuevas
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2006
Volume: 53
Page(s): 442 - 448
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2006.870846
Regular:

The quasi-static capacitance-voltage ( C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the... View More

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