IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave AlGaN/GaN HFETs

Author(s): R.J. Trew ; G.L. Bilbro ; W. Kuang ; Y. Liu ; H. Yin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2005
Volume: 6
Page Count: 11
Page(s): 56 - 66
ISSN (Paper): 1527-3342
DOI: 10.1109/MMW.2005.1417998
Regular:

This article presents the operating physics, performance potential, and status of device development of microwave AlGaN/GaN heterostructure field-effect transistors. AlGaN/GaN HFETs show potential... View More

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