IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mobility improvement after HCl post-deposition cleaning of high-/spl kappa/ dielectric: a potential issue in wet etching of dual metal gate Process technology

Author(s): M.S. Akbar ; N. Moumen ; J. Barnett ; Byoung-Hun Lee ; J.C. Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2005
Volume: 26
Page(s): 163 - 165
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2005.843210
Regular:

The effect of deionized water and dilute hydrochloric acid, 500:1 (HCl) post-Hf-silicate deposition cleaning on the device characteristics of Hf-silicate MOSFETs have been investigated. The... View More

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