IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

Author(s): M. Yamaoka ; Y. Shinozaki ; N. Maeda ; Y. Shimazaki ; K. Kato ; S. Shimada ; K. Yanagisawa ; K. Osada
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Volume: 40
Page(s): 186 - 194
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.2004.838014
Regular:

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode,... View More

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