IEEE - Institute of Electrical and Electronics Engineers, Inc. - The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance

Author(s): T. Skotnicki ; J.A. Hutchby ; Tsu-Jae King ; H.-S.P. Wong ; F. Boeuf
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Volume: 21
Page Count: 11
Page(s): 16 - 26
ISSN (Paper): 8755-3996
DOI: 10.1109/MCD.2005.1388765
Regular:

The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as seen in the new 2003 International Technology Roadmap for Semiconductors ITRS), is accelerating... View More

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