IEEE - Institute of Electrical and Electronics Engineers, Inc. - SiGe HMODFET "KAIST" micropower model and amplifier realization

Author(s): A. Vilches ; K. Fobelets ; K. Michelakis ; S. Despotopoulos ; C. Papavassiliou ; T. Hackbarth ; U. Konig
Sponsor(s): IEEE Circuits and Systems Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2004
Volume: 51
Page(s): 1,100 - 1,105
ISSN (Paper): 1549-8328
ISSN (Online): 1558-0806
DOI: 10.1109/TCSI.2004.829242
Regular:

The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted... View More

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