IEEE - Institute of Electrical and Electronics Engineers, Inc. - A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Author(s): P. Marshall ; M. Carts ; A. Campbell ; R. Ladbury ; R. Reed ; C. Marshall ; S. Currie ; D. McMorrow ; S. Buchner ; C. Seidleck ; P. Riggs ; K. Fritz ; B. Randall ; B. Gilbert
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2004
Volume: 51
Page(s): 3,457 - 3,463
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2004.839193
Regular:

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex... View More

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